sot-23 plastic-encapsulate mosfets CJ3404 n-channel enhancement mode field effect transistor description the CJ3404 use advanced trench tec hnology to provide excellent r ds(on) and low gate charge. this device is suitable for use as a load switch or in pwm applications.the source leads are separated to allow a kelvin connection to the source,which may be used to bypass the source inductance. marking: r4 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t 10s ) i d 5.8 a pulsed drain current * i dm 30 a thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -55~ 150 * repetitive rating : pulse width limited by maximum junction temperature. so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zero gate voltage drain current i dss v ds =30v,v gs = 0v 1 a gate-body leakage current i gss v gs =20v, v ds = 0v 100 na gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =5.8a 30 m ? drain-source on-resistance (note 1) r ds(on) v gs =4.5v, i d =4.8a 42 m ? forward tranconductance (note 1) g fs v ds =5v, i d =5.8a 5 s diode forward voltage v sd i s =1a 1 v dynamic parameters (note 2) input capacitance c iss 820 pf output capacitance c oss 118 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 85 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 1.5 ? switching parameters (note 2) turn-on delay time t d(on) 6.5 ns turn-on rise time t r 3.1 ns turn-off delay time t d(off) 15.1 ns turn-off fall time t f v gs =10v,v ds =15v, r l =2.6 ? ,r gen =3 ? 2.7 ns note : 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
012345 0 5 10 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-5 1e-4 1e-3 0.01 0.1 1 10 1 . 52 . 02 . 53 . 03 . 54 . 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 024681 0 0 10 20 30 40 50 60 345678910 20 30 40 50 60 70 CJ3404 6v 10v 4.5v v gs =4v v gs =3.5v v gs =3v output characteristics drain current i d (a) drain to source voltage v ds (v) 22 v sd i s ?? source current i s (a) source to drain voltage v sd (v) drain current i d (a) gate to source voltage v gs (v) ta=25 o c transfer characteristics 1.3 v gs =10v v gs =4.5v ta=25 o c i d r ds(on) ?? on-resistance r ds(on) (m ? ) drain current i d (a) ta=25 o c i d =2.8a i d =3.6a v gs r ds(on) ?? on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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